JPS626660B2 - - Google Patents

Info

Publication number
JPS626660B2
JPS626660B2 JP10379377A JP10379377A JPS626660B2 JP S626660 B2 JPS626660 B2 JP S626660B2 JP 10379377 A JP10379377 A JP 10379377A JP 10379377 A JP10379377 A JP 10379377A JP S626660 B2 JPS626660 B2 JP S626660B2
Authority
JP
Japan
Prior art keywords
region
drain
electrode
source
inversion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10379377A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5437584A (en
Inventor
Tadashi Kuragami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10379377A priority Critical patent/JPS5437584A/ja
Publication of JPS5437584A publication Critical patent/JPS5437584A/ja
Publication of JPS626660B2 publication Critical patent/JPS626660B2/ja
Granted legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
JP10379377A 1977-08-29 1977-08-29 Field effect semiconductor device of insulation gate type Granted JPS5437584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10379377A JPS5437584A (en) 1977-08-29 1977-08-29 Field effect semiconductor device of insulation gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10379377A JPS5437584A (en) 1977-08-29 1977-08-29 Field effect semiconductor device of insulation gate type

Publications (2)

Publication Number Publication Date
JPS5437584A JPS5437584A (en) 1979-03-20
JPS626660B2 true JPS626660B2 (en]) 1987-02-12

Family

ID=14363270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10379377A Granted JPS5437584A (en) 1977-08-29 1977-08-29 Field effect semiconductor device of insulation gate type

Country Status (1)

Country Link
JP (1) JPS5437584A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection

Also Published As

Publication number Publication date
JPS5437584A (en) 1979-03-20

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